FQB2N60 mosfet equivalent, 600v n-channel mosfet.
*
*
*
*
*
* 2.4A, 600V, RDS(on) = 4.7Ω @VGS = 10 V Low gate charge ( typical 9.0 nC) Low Crss ( typical 5.0 pF) Fast switching 100% avalanche test.
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switch.
Image gallery
TAGS
Download (Size : 580.92KB)